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ABB 5SHX1445H0002 3BHL000387R0101 3BHB003386R0101 5SXE05-0153
ABB 5SHX1445H0002 3BHL000387R0101 3BHB003386R0101 5SXE05-0153
ABB 5SHX1445H0002 3BHL000387R0101 3BHB003386R0101 5SXE05-0153
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5SHX1445H0002 3BHL000387R0101 3BHB003386R0101 5SXE05-0153

IGCT Module

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Technical specifications for 5SHX1445H0002 3BHL000387R0101 3BHB003386R0101 5SXE05-0153

  • Product Model
    5SHX1445H0002 3BHL000387R0101 3BHB003386R0101 5SXE05-0153
  • Spare Model
    5SHX1445H0002 3BHL000387R0101/3BHB003386R0101 5SXE05-0153
  • Product Parameters
    IGCT Module
  • Tariff Code
    8537101190
  • Country of origin
    SWEDEN
  • Place of shipment
    Xiamen, China
  • In stock
    1 unit
  • Estimated Shipping Size
    29x34x5.7cm
  • Manufacturer
    ABB
  • Weight
    1.6 kg
  • Rated Voltage (VDRM/VRRM)
    4,500 V
  • Rated Current (IT(AV))
    1,445 A
  • Peak Forward Current
    2,200 A
  • Conduction Voltage Drop
    2.5 V
  • Gate Trigger Current
    0.5 A
  • Gate Supply Voltage
    +15 V DC
  • Turn-off Time
    ≤ 1 µs
  • Short-Circuit Withstand Capability
    10 kA
  • Thermal Resistance (Rth(j-c))
    0.1 °C/W
  • Maximum Operating Temperature
    150°C

Description

ABB 3BHL000387R0101 5SHX1445H0002 / 3BHB003386R0101 5SXE05-0153 is a high-performance Integrated Gate-Commutated Thyristor (IGCT) power semiconductor module for demanding industrial power electronic applications. The assembly combines the 5SHX1445H0002 asymmetric reverse-conducting IGCT thyristor chip with the 3BHB003386R0101 gate driver unit (5SXE05-0153) in a single robust package.

The module integrates IGCT technology, combining the high-speed switching characteristics of IGBT devices with the high blocking voltage and low conduction loss properties of GTO (Gate Turn-Off) thyristors. The 5SHX1445H0002 chip delivers a rated current of 1,445 A with a blocking voltage capability of 4,500 V, suitable for medium-voltage drive systems such as 3.3 kV AC applications.

Electrical performance includes a turn-off time of ≤ 1 µs, minimum dv/dt capability of 1,000 V/µs, and conduction voltage drop of 2.5 V. The gate driver operates on +15 V DC supply and delivers gate trigger current of 0.5 A. Short-circuit withstand capability is rated at 10 kA. Gate-to-main circuit isolation is rated at 6 kV AC.

Information

Overview Manuals Application Notes Product Applications Mechanical Insertion & Clamping

Features:

  • IGCT high-power switching module
  • 4.5 kV-class medium-voltage power device
  • Fast controlled turn-off switching performance
  • Low conduction and switching losses
The ABB 5SHX1445H0002 3BHL000387R0101/3BHB003386R0101 5SXE05-0153 IGCT module is a high-power semiconductor switching device used in medium-voltage drive and power conversion systems. It is built on Integrated Gate-Commutated Thyristor (IGCT) technology, combining the high-current capability of thyristor-based devices with fast, controllable turn-off behavior.

The module operates as part of ABB’s high-power drive platforms such as ACS6000 and PCS6000, where it functions as a primary switching element in inverter or converter stages. The device is paired with the 5SXE05-0153 gate unit, which provides high-current gate control pulses required for precise switching performance and stable commutation under high electrical stress.

The 5SHX1445H0002 3BHL000387R0101/3BHB003386R0101 5SXE05-0153 ABB Integrated Gate-Commutated Thyristor (IGCT) module may still be available for purchase and support from Amikon Limited beyond End-Of-Life (EOL) by the manufacturer (OEM).
ABB 5SHX1445H0002 3BHL000387R0101/3BHB003386R0101 5SXE05-0153 Integrated Gate-Commutated Thyristor (IGCT) module Manuals, Datasheets, Drivers, Link Important Notice: Other accessories, manuals, cables, calibration data, software, etc. are not included with this equipment unless listed in the above stock item description. All prices are shown in USD.
In operation, the IGCT module is used to control high-voltage AC/DC conversion in large-scale industrial systems. It is commonly installed in high-power motor drives, grid stabilization systems, HVDC transmission, mining drives, marine propulsion systems, and heavy industrial converters where high efficiency and high reliability are required.
 
The integrated gate unit architecture reduces external wiring complexity and improves switching coordination between power and control layers. This contributes to stable commutation behavior during high-current switching cycles and supports long-term operation in continuous-duty environments.
  • Heavy-Duty Drives: Used in high-power motor control for cement, papermaking, and mining
  • Rail Transport: Integrated into propulsion and auxiliary converters for electric trains/locomotives
  • Power Electronics: Utilized in HVDC, SVC, and wind turbine converters
  • Medium-Voltage Inverters: Primary switching device in VSIs with high snubberless turn-off ratings
This content has been produced using multiple sources.Amikon takes no responsibility for the accuracy of this information. Always consult the original equipment manufacturer for the most up to date instructions and information.
Handling: Handle the press-pack housing by the edges. Never touch the ceramic collar or the copper pole faces with bare hands to prevent oil and contamination.
Stack Alignment: Align the IGCT perfectly between the upper and lower water-cooled heat sinks.
Clamping Force: The device requires a strict, even clamping force (typically 40 kN for this size class). Use a calibrated torque wrench or hydraulic press to tighten the stack spring according to ABB's specific hardware manual.

Alternative Names

5SHX1445H0002 3BHL000387R010I 5SHX1445H0002 3BHL000387R01O1 5SHX1445H0002 3BHL000387R0I01 5SHX1445H0002 3BHL000387RO101 5SHX1445H0002 3BHL00O387R0101 5SHX1445H00O2 3BHL000387R0101 5SHX1445HO002 3BHL000387R0101 5SHXI445H0002 3BHL000387R0101 3BHB003386R0101 5SXE05-0I53 3BHB003386R0101 5SXE05-O153 3BHB003386R0101 5SXEO5-0153 3BHB003386R010I 5SXE05-0153 3BHB003386R01O1 5SXE05-0153 3BHB003386R0I01 5SXE05-0153 3BHB003386RO101 5SXE05-0153 3BHB0O3386R0101 5SXE05-0153 3BH8003386R0101 5SXE05-0153

Technical notes

Thermal management requires water cooling or an appropriate heatsink, with a junction-to-case thermal resistance of 0.1 °C/W. The module must be mounted with a clamping pressure of 12–15 kN. Operating temperature range is -40°C to +85°C, with junction temperatures up to 150°C.

FAQs

  • What is this 5SHX1445H0002?

    +
    It is a high-performance semiconductor switching module that combines a central power thyristor wafer with an integrated, closely coupled gate driver board
  • What are its primary voltage and current ratings?

    +
    The module is rated for a peak voltage class of 4500 V (4.5 kV) and a continuous anode current threshold of 1445 A
  • How does the gate driver communicate with the main control rack?

    +
    The integrated gate unit communicates using fiber optic links. This provides absolute galvanic isolation and safeguards low-voltage control layers from the high-voltage power paths.
  • What are the mechanical mounting constraints?

    +
    Because it uses a standard press-pack configuration, it requires a precise and uniform clamping force of exactly 40 kN. Incorrect mounting force will lead to irregular parallel contact resistance profiles and premature component failure
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