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FZ1200R33KF2C
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Product Information
Product Describe
FZ1200R33KF2C
IGBT MODULE
3300 V
1200 A
SINGLE SWITCH
IGBT MODULE
3300 V
1200 A
SINGLE SWITCH
Specifications
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Product ModelFZ1200R33KF2C
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Product ParametersIGBT Module
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Tariff Code8537101190
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Country of originUSA
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Place of shipmentXiamen, China
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Estimated Shipping Size19x14x3.8cm
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ManufacturerInfineon
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weight1.3 kg
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Collector- Emitter Voltage VCEO Max3.3 kV
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Collector-Emitter Saturation Voltage3.4 V
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Continuous Collector Current at 25 C2 kA
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Gate-Emitter Leakage Current400 nA
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Pd - Power Dissipation14.5 kW
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Package/CaseIS5a ( 62 mm )-9
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Minimum Operating Temperature- 40 C
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Maximum Operating Temperature+ 125 C
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Maximum Gate Emitter Voltage20 V
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Mounting StyleScrew Mount
Warranty Period & Disclaimer
Amikon is not an authorized distributor unless otherwise specified, representative, or affiliate of the manufacturer of this product. All trademarks and documents are the property of their respective owners and are provided for identification and informational.
FAQs
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How to reduce the temperature rise of the FZ1200R33KF2C?+Reducing the temperature rise of the FZ1200R33KF2C IGBT module involves optimizing both the module\'s operating conditions and its thermal management system. Key strategies include improving heat dissipation, ensuring proper gate driving, and maintaining a stable operating environment.
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What is the current voltage of FZ1200R33KF2C?+The FZ1200R33KF2C is an Infineon IGBT module with a Collector-Emitter Breakdown Voltage (Vces) of 3300V, not a \
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