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2MBI600VXA-120E-51

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Product Information

Product Describe
2MBI600VXA120E51
INSULATED GATE BIPOLAR TRANSISTOR
800A I(C)
1200V V(BR)CES

Technical specifications for 2MBI600VXA-120E-51

  • Product Model
    2MBI600VXA-120E-51
  • Product Parameters
    INSULATED GATE BIPOLAR TRANSISTOR
  • Tariff Code
    8537101190
  • Country of origin
    Japan
  • Place of shipment
    Xiamen, China
  • Estimated Shipping Size
    6.8x8.5x13cm
  • Manufacturer
    Fuji Electric
  • Weight
    0.4 kg
  • Product Series
    V series IGBT Module
  • Package Type
    2-in-1 Dual Module
  • Collector-Emitter Voltage
    600 V
  • Nominal
    120 A
  • Gate-Emitter Voltage
    ±20 V
  • Reverse voltage
    600 V
  • Average forward current
    120 A
  • Factory New

    These are new and current items that are procured from the manufacturer.
  • New No Package

    These parts are new. They have not been used, but their original packaging is no longer available.
  • New In Opened Package

    These parts are new. They have not been used, but their original packaging has been opened or the packaging is significantly aged.
  • New In Sealed Package

    Parts are new. They have not been used and still have their original package seal intact.
  • New in Original Package

    These parts are new. The packages were not originally sealed by their original manufacturer.

Warranty Period & Disclaimer

Amikon is not an authorized distributor unless otherwise specified, representative, or affiliate of the manufacturer of this product. All trademarks and documents are the property of their respective owners and are provided for identification and informational.

FAQs

  • What is 2MBI600VXA-120E-51?+
    The Fuji 2MBI600VXA-120E-51 is a 1200V/600A 2-in-1 IGBT module from the high-performance V-Series, designed for high-speed switching in applications like motor drives, UPS, and industrial machinery.
  • What are the common applications for this module?+
    It is ideal for high-power, high-efficiency switching applications, including inverter motor drives, AC/DC servo drive amplifiers, uninterruptible power supplies (UPS), and industrial welding machines.
  • What is the difference between the -51 and -50/-54 models?+
    The 2MBI600VXA series (including -50, -51, -54) are part of the V-Series V-Package design, offering 1200V/600A capability with similar electrical characteristics, often distinguishing specific manufacturing improvements or variants.
  • What protection features does this module have?+
    It provides high-speed switching and low inductance to minimize voltage spikes during operation. It is designed with a high-strength package for industrial environments
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MORE INFORMATION

Overview Manuals Technical notes Product Applications Installation Best Practices

Features:

  • High speed switching
  • Voltage drive
  • Low Inductance module structure
  • IGBT MODULE (V series)1200V / 600A / 2 in one package
Insulated gate bipolar transistor (IGBT) modulesare used widely due to their advantages of low loss,high breakdown resistance, ease of drive circuit designand so on. In the fi eld of high-voltage and high powerdevice applications, the heretofore widely-used gateturn-off (GTO) thyristors are being replaced with IGBT modules, and IGBT modules are being applied widelyto high-power inverters and high voltage inverter units.

The 2MBI600VXA-120E-51 Fuji Electric INSULATED GATE BIPOLAR TRANSISTOR may still be available for purchase and support from Amikon Limited beyond End-Of-Life (EOL) by the manufacturer (OEM).
Fuji Electric 2MBI600VXA-120E-51 INSULATED GATE BIPOLAR TRANSISTOR Manuals, Datasheets, Drivers, Link Important Notice: Other accessories, manuals, cables, calibration data, software, etc. are not included with this equipment unless listed in the above stock item description. All prices are shown in USD.
Because a high-power IGBT module will instantaneously cut off a large current, the surge voltagegenerated at turn-off is large. For the V-Series HPM  Family, in addition to the previous (E-type) lineup ofV-Series IGBT chips, an IGBT chip product lineup(P-type) having soft switching characteristics wasnewly developed by adjusting the IGBT chip characteristics for applications in the high-power device fi eld.Figure 2 shows a comparison of the switching waveforms at turn-off for E-type and P-type 1,700 V-IGBTchips. Compared to the E-type, the P-type has a slower d i/d t at turn-off, and achieves a lower turn-off surge 
  • Industrial Inverter Drives:High-capacity control for pumps, fans, compressors & conveyors
  • Welding Equipment:High-speed switching for arc welders & robotic cells
  • Renewable Energy Converters:Wind/solar inverters for grid-ready power conversion
  • Uninterruptible Power Systems (UPS):Large-scale backup for data centers & medical facilities
  • Transportation Infrastructure:Rail traction & auxiliary power modules
This content has been produced using multiple sources.Amikon takes no responsibility for the accuracy of this information. Always consult the original equipment manufacturer for the most up to date instructions and information.
Surface Preparation: Ensure the heat sink surface is flat (flatness ≤ 50μm) and clean. Apply a thin, uniform layer of high-quality thermal grease (approx. 100-200μm thick) to the module's copper base plate to optimize heat transfer.
Screw Tightening Sequence: For mounting multiple screws, tighten them in a diagonal pattern in two steps: first to 1/3 of the target torque, then to the full recommended value.
Static Safety: Use ESD-safe handling procedures. IGBT gates are extremely sensitive to electrostatic discharge.
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