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- 2MBI600VXA-120E-51
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We provide 1 year warranty for all remaining parts.
The warranty period is one year from the date of shipment, unless otherwise stated in the parts description. We guarantee that the project will not exhibit functional defects that may occur under normal operating conditions during the warranty period.
The warranty period is one year from the date of shipment, unless otherwise stated in the parts description. We guarantee that the project will not exhibit functional defects that may occur under normal operating conditions during the warranty period.
The warranty period is one year from the date of shipment, unless otherwise stated in the parts description. We guarantee that the project will not exhibit functional defects that may occur under normal operating conditions during the warranty period.
In the event of a defect, we will send new equipment, repair equipment or refund the purchase price based on our availability. You must contact us to obtain a return authorization and return the defective device to us within 14 days of reporting the defect.
In the event of a defect, we will send new equipment, repair equipment or refund the purchase price based on our availability. You must contact us to obtain a return authorization and return the defective device to us within 14 days of reporting the defect.
We have been working hard to update our inventory. If we have stock or parts available for new factory purchases, you can contact the order online.
If we do not currently have an inventory, the displayed quantity will show "Ask". Please create an online quote or contact us by phone, fax or email to check availability.
Amikon offers a wide range of components, products and services related to industrial automation. We have a large surplus of stocks and are also distributors of new products from a variety of quality manufacturers.
Technical specifications for 2MBI600VXA-120E-51
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Product Model2MBI600VXA-120E-51
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Product ParametersINSULATED GATE BIPOLAR TRANSISTOR
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Tariff Code8537101190
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Country of originJapan
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Place of shipmentXiamen, China
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In stock1 unit
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Estimated Shipping Size17.1x8.9x4.8cm
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ManufacturerFuji Electric
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Weight0.9 kg
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Product SeriesV series IGBT Module
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Package Type2-in-1 Dual Module
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Collector-Emitter Voltage600 V
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Nominal120 A
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Gate-Emitter Voltage±20 V
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Reverse voltage600 V
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Average forward current120 A
Description
The FUJI ELECTRIC 2MBI600VXA-120E-51 is a 2-Pack IGBT (Insulated Gate Bipolar Transistor) module rated for 600 A collector current and 1200 V collector-emitter voltage. It utilizes advanced trench gate field stop technology to achieve low saturation voltage and fast switching characteristics.
The module integrates two IGBT chips with anti-parallel free-wheeling diodes in a half-bridge configuration. Continuous collector current is 600 A at case temperature of 25°C and 450 A at 80°C. Peak collector current capability is 1200 A.
Electrical characteristics include a typical collector-emitter saturation voltage of 1.8 V at 600 A with 15 V gate drive, turn-on switching loss of 25 mJ, and turn-off switching loss of 35 mJ. The integrated diode features a forward voltage of 1.8 V and reverse recovery time of 200 ns.
The module integrates two IGBT chips with anti-parallel free-wheeling diodes in a half-bridge configuration. Continuous collector current is 600 A at case temperature of 25°C and 450 A at 80°C. Peak collector current capability is 1200 A.
Electrical characteristics include a typical collector-emitter saturation voltage of 1.8 V at 600 A with 15 V gate drive, turn-on switching loss of 25 mJ, and turn-off switching loss of 35 mJ. The integrated diode features a forward voltage of 1.8 V and reverse recovery time of 200 ns.
Information
Overview
Manuals
2MBI600VXA-120E-51
Product Applications
Installation Best Practices
Features:
- High speed switching
- Voltage drive
- Low Inductance module structure
- IGBT MODULE (V series)1200V / 600A / 2 in one package
The 2MBI600VXA-120E-51 Fuji Electric INSULATED GATE BIPOLAR TRANSISTOR may still be available for purchase and support from Amikon Limited beyond End-Of-Life (EOL) by the manufacturer (OEM).
Fuji Electric 2MBI600VXA-120E-51 INSULATED GATE BIPOLAR TRANSISTOR Manuals, Datasheets, Drivers, Link
Important Notice: Other accessories, manuals, cables, calibration data, software, etc. are not included with this equipment unless listed in the above stock item description. All prices are shown in USD.
Because a high-power IGBT module will instantaneously cut off a large current, the surge voltagegenerated at turn-off is large. For the V-Series HPM Family, in addition to the previous (E-type) lineup ofV-Series IGBT chips, an IGBT chip product lineup(P-type) having soft switching characteristics wasnewly developed by adjusting the IGBT chip characteristics for applications in the high-power device fi eld.Figure 2 shows a comparison of the switching waveforms at turn-off for E-type and P-type 1,700 V-IGBTchips. Compared to the E-type, the P-type has a slower d i/d t at turn-off, and achieves a lower turn-off surge
- Industrial Inverter Drives:High-capacity control for pumps, fans, compressors & conveyors
- Welding Equipment:High-speed switching for arc welders & robotic cells
- Renewable Energy Converters:Wind/solar inverters for grid-ready power conversion
- Uninterruptible Power Systems (UPS):Large-scale backup for data centers & medical facilities
- Transportation Infrastructure:Rail traction & auxiliary power modules
This content has been produced using multiple sources.Amikon takes no responsibility for the accuracy of this information. Always consult the original equipment manufacturer for the most up to date instructions and information.
Surface Preparation: Ensure the heat sink surface is flat (flatness ≤ 50μm) and clean. Apply a thin, uniform layer of high-quality thermal grease (approx. 100-200μm thick) to the module's copper base plate to optimize heat transfer.
Screw Tightening Sequence: For mounting multiple screws, tighten them in a diagonal pattern in two steps: first to 1/3 of the target torque, then to the full recommended value.
Static Safety: Use ESD-safe handling procedures. IGBT gates are extremely sensitive to electrostatic discharge.
Technical notes
Thermal performance is characterized by junction-to-case thermal resistance of 0.06 K/W for the IGBT and 0.12 K/W for the diode. Isolation voltage between terminals and base plate is 2500 V AC for 1 minute.
The module operates over junction temperatures from −40°C to +150°C. It is suitable for high-power applications including motor drives, power supplies, inverters, UPS systems, welding equipment, and traction drives.
FAQs
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What is 2MBI600VXA-120E-51?
+The Fuji 2MBI600VXA-120E-51 is a 1200V/600A 2-in-1 IGBT module from the high-performance V-Series, designed for high-speed switching in applications like motor drives, UPS, and industrial machinery. -
What are the common applications for this module?
+It is ideal for high-power, high-efficiency switching applications, including inverter motor drives, AC/DC servo drive amplifiers, uninterruptible power supplies (UPS), and industrial welding machines. -
What is the difference between the -51 and -50/-54 models?
+The 2MBI600VXA series (including -50, -51, -54) are part of the V-Series V-Package design, offering 1200V/600A capability with similar electrical characteristics, often distinguishing specific manufacturing improvements or variants. -
What protection features does this module have?
+It provides high-speed switching and low inductance to minimize voltage spikes during operation. It is designed with a high-strength package for industrial environments
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