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SEMIKRON SEMIX353GB126V1
SEMIKRON SEMIX353GB126V1
SEMIKRON SEMIX353GB126V1
· Product image is representative; revision or series may vary. Contact us to request a specific version.

SEMIX353GB126V1

Trench IGBT Modules

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Technical specifications for SEMIX353GB126V1

  • Product Model
    SEMIX353GB126V1
  • Product Parameters
    Trench IGBT Modules
  • Tariff Code
    8537101190
  • Country of origin
    USA
  • Place of shipment
    Xiamen, China
  • Estimated Shipping Size
    15x6.3x2.3cm
  • Manufacturer
    SEMIKRON
  • Weight
    0.3 kg
  • Collector-Emitter Voltage
    1200V
  • Nominal Current
    350A
  • Max Collector Current
    700A
  • Gate-Emitter Voltage
    ±20V
  • Operating Temperature
    -40°C to +150°C
  • Storage Temperature
    -40°C to +125°C

Description

Homogeneous Si
Trench = Trenchgate technology
VCE(sat) with positive temperaturecoefficient
High short circuit capability
UL recognised file no. E63532
AC inverter drives

Information

Overview Manuals Technical notes Product Applications Thermal Interface Material (TIM) Application

Features:

  • Homogeneous Si
  • Trench = Trenchgate technology
  • VCE(sat) with positive temperaturecoefficient
  • With step-less current limiting used, therectifiers feature high precision batter
  • High short circuit capability
  • UL recognised file no. E63532
The Semikron SEMIX353GB126V1 is a IGBT (Insulated Gate Bipolar Transistor) module for robust power electronic applications. Specifically engineered as a half-bridge trench IGBT, it operates with a high voltage rating of 1200V and a continuous collector current of approximately 350A. It is commonly used in industrial power inverters, motor drives, and energy generation systems where high-speed switching and thermal efficiency are critical.

The SEMIX353GB126V1 Semikron Insulated Gate Bipolar Transistor Module may still be available for purchase and support from Amikon Limited beyond End-Of-Life (EOL) by the manufacturer (OEM).
Semikro SEMIX353GB126V1 Insulated Gate Bipolar Transistor Module Manuals, Datasheets, Drivers, Link Important Notice: Other accessories, manuals, cables, calibration data, software, etc. are not included with this equipment unless listed in the above stock item description. All prices are shown in USD.
The Semikron SEMIX353GB126V1 technical notes highlight its role as a robust half-bridge Trench IGBT module with a 1200V rating and nominal current of 350A. Engineered with 7th-generation Trench Stop™ technology and ultra-thin wafers, it is designed for medium-power industrial converters (75–150 kW) where efficient switching and high power density are required.
Gate Driver Requirements: The module supports a standard gate-emitter voltage range of 20V. It is highly recommended to use SKYPER 42 or equivalent plug-and-play drivers that provide reinforced isolation and multi-failure management.
Switching Frequency: While Trench IGBTs balance conduction and switching losses, this class is typically optimized for frequencies between a few kHz up to 20 kHz.
  • Pumps & Compressors: Speed control for high-power industrial fluid and air systems
  • Conveyor Systems: Managing high continuous load currents in large-scale slat or belt conveyors
  • Cranes & Hoists: Handling the high start-up surges required for lifting heavy industrial loads
  • Solar Inverters: Commercial-scale power conversion for grid-tied solar farms
This content has been produced using multiple sources.Amikon takes no responsibility for the accuracy of this information. Always consult the original equipment manufacturer for the most up to date instructions and information.
Thickness: A uniform layer of 50 µm to 100 µm is recommended.Method: Stencil printing is the preferred method for high-volume production to ensure reproducibility. Avoid using a brush or spatula, as they create uneven layers that can lead to air pockets and hotspot destruction.Pre-applied TIM: Check if your module version has pre-applied thermal paste, which eliminates the manual application step.

FAQs

  • What is the SEMIX353GB126V1?

    +
    The SEMiX353GB126V1 is a 1200V, 350A Trench Gate IGBT module manufactured by SEMIKRON, primarily designed for medium-power industrial applications, such as inverters, motor drives, and solar converters.
  • What are the main electrical ratings of the SEMIX353GB126V1?

    +
    This module has a rated maximum voltage of 1200V and a collector current of 350A. It uses trench gate IGBT technology to balance conduction losses and switching losses.
  • Can it handle high-frequency switching?

    +
    Yes, it is suitable for switching frequencies typically ranging from a few kHz up to 15-20 kHz, depending on thermal conditions.
  • Does this module require soldering?

    +
    No. The SEMiX353GB126V1 uses a spring-contact interface for both gate driver and power connections, which eliminates soldering and reduces assembly time.
  • How is the module mounted?

    +
    The module uses a spring-contact interface for gate driver and power connections, which removes the need for soldering.
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